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File name: | 5991-3514EN TC611 Diode Model - Technical Overview c20140806 [3].pdf [preview 5991-3514EN TC611 Diode Model - Technical Overview c20140806 [3]] |
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Mfg: | Agilent |
Model: | 5991-3514EN TC611 Diode Model - Technical Overview c20140806 [3] 🔎 |
Original: | 5991-3514EN TC611 Diode Model - Technical Overview c20140806 [3] 🔎 |
Descr: | Agilent 5991-3514EN TC611 Diode Model - Technical Overview c20140806 [3].pdf |
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File name 5991-3514EN TC611 Diode Model - Technical Overview c20140806 [3].pdf Keysight Technologies TC611 Diode Model Technical Overview Description This product note provides a Spice model and a Libra model of the TC611 discrete beam lead GaAs diode. This diode is a modified barrier Schottky diode which features very low forward voltage and a soft reverse breakdown characteristic. The forward characteristics are modeled using a standard diode model (DMOD1). The reverse characteristics are best modeled using an anti parallel diode with modified characteristic (DMOD2). The 11 femto-farad parallel capacitor represents the parasitic capacitance of the bond pads. 02 | Keysight | TC611 Diode Model - Technical Overview Spice Model |
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