Agilent English 2013-06-19 PDF 3.53 MB 5990-7781EN c20141029 [42] free download

File name English _ 2013-06-19 _ PDF 3.53 MB 5990-7781EN c20141029 [42].pdf

Keysight Technologies PNA-X Series Microwave Network Analyzers Active-Device Characterization in Pulsed Operation Using the PNA-X Application Note Introduction Vector network analyzers (VNA) are the common tool for characterizing RF and microwave components in both continuous-wave (CW) and pulsed operations. Some external equipment may be used in conjunction with a VNA to modulate the stimulus or DC bias, and to perform accurate S-parameter measurements in pulsed operation. However, components that need to be characterized in pulsed operation mode are often active devices such as amplifiers or converters, and many active parameters are characterized in addition to S-parameters. For amplifiers as an example, 1 dB compression (P1 dB), intermodulation distortion (IMD), and third-order intercept point (IP3) are commonly measured, and many parameters such as noise figure, higher-order distortion products, harmonics, etc. are characterized depending on their intended application needs. These active parameters are power-dependent, so additional factors must be considered for precise characterization. To respond to such needs, Keysight Technologies, Inc.'s PNA-X Series, the most flexible VNA that employs many capabilities designed for active-device characteriza- tion, enables S-parameter and active parameter measurements with a single set of connections. The PNA-X's four internal pulse generators and pulse modulators, two internal sources with a combining network, and active-application options provide fully integrated pulsed active-device characterization. This application note discusses pulsed S-parameter measurements using the PNA-X Series and measurement techniques that enable power-dependent active-device characterization including compression and distortion. It also provides a brief summary of pulsed-RF measure- ment types, and two detection techniques (wideband and narrowband detection) are explained specifically using PNA-X architecture and methodologies. Refer to application note 1408-12 Pulsed-RF S-Parameter Measurements Using Wideband and Narrowband Detection part number 5989-4839EN for further details of measurement types and detection techniques. Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pulsed-RF Measurement Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pulsed-RF Detection Techniques . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Wideband detection . . . . . . . . . . . . . . . . . .