Fairchild Semiconductor si3443dv free download

File name si3443dv.pdf

Si3443DV April 2001 Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced -4 A, -20 V. RDS(ON) = 0.065 @ VGS = -4.5 V using Fairchild's advanced PowerTrench process that RDS(ON) = 0.100 @ VGS = -2.5 V has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Fast switching speed. These devices have been designed to offer exceptional Low gate charge (7.2nC typical). power dissipation in a very small footprint for applications where the larger packages are impractical. High performance trench technology for extremely low RDS(ON). Applications SuperSOTTM-6 package: small footprint (72% smaller Load switch than standard SO-8); low profile (1mm thick). Battery protection Power management S D 1 6 D 2 5 G D 3 4 SuperSOT -6 TM D Absolute Maximum Ratings TA = 25