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File name: | 2n6849_irff9130.pdf [preview 2n6849 irff9130] |
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Mfg: | International Rectifier |
Model: | 2n6849 irff9130 🔎 |
Original: | 2n6849 irff9130 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier 2n6849_irff9130.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 26-05-2021 |
User: | Anonymous |
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File name 2n6849_irff9130.pdf PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5A The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings and temperature stability of the electrical parameters. n Dynamic dv/dt Rating They are well suited for applications such as switch- n Hermetically Sealed ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25 |
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