Philips pmbfj174 pmbf175 pmbf176 pmbf177 free download

File name pmbfj174_pmbf175_pmbf176_pmbf177.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and handbook, halfpage 3 source connections. d g s PINNING 1 2 1 = drain Top view MAM386 2 = source 3 = gate Note 1. Drain and source are interchangeable. Marking codes: Fig.1 Simplified outline and symbol, SOT23. 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current IG max. 50 mA Total power dissipation up to Tamb = 25 C Ptot max. 300 mW PMBFJ174 175 176 177 Drain current VDS = 15 V; VGS = 0 20 7 2 1,5 mA IDSS 135 70 35 20 mA Drain-source ON-resistance VDS = 0,1 V; VGS = 0 RDS on 85 125 250 300 April 1995 2 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 30 V Gate-source voltage VGSO max.