Philips blf7g20l-250p 7g20ls-250p free download

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BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 -- 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1900 28 70 18 35 29.5[1] [1] Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF. 1.2 Features and benefits Excellent ruggedness High-efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1880 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the 1805 MHz to 1880 MHz frequency range NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G20L-250P (SOT539A) 1 drain1 1 2 1 2 drain2 5 3 gate1 3