Philips bll6h1214l-250 1214ls-250 free download

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BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 3 -- 14 July 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 250 17 55 15 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with of 10 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC NXP Semiconductors BLL6H1214L(S)-250 LDMOS L-band radar power transistor 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H1214L-250 (SOT502A) 1 drain 1 2 gate 1