International Rectifier 2n6788 irff120 free download

File name 2n6788_irff120.pdf

PD - 90426C IRFF120 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6788 HEXFET TRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30 6.0A The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings and temperature stability of the electrical parameters. n Dynamic dv/dt Rating They are well suited for applications such as switch- n Hermetically Sealed ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25