ST d150n3llh6 p150n3llh6 u150n3llh6 free download

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STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220 STripFETTM VI DeepGATETM Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 80 A 3 3 STP150N3LLH6 30 V 0.0033 80 A 1 1 2 STu150N3LLH6 30 V 0.0033 80 A IPAK DPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 High avalanche ruggedness 1 Low gate drive power losses TO-220 Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST's proprietary STripFETTM technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order codes Marking Package Packaging STD150N3LLH6 150N3LLH6 DPAK Tape and reel STP150N3LLH6 150N3LLH6 TO-220 Tube STU150N3LLH6 150N3LLH6 IPAK Tube September 2009 Doc ID 15227 Rev 3 1/16 www.st.com 16 Contents STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . .