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File name: | std2n62k3_stf2n62k3_stu2n62k3_stp2n62k3.pdf [preview d2n62k3 f2n62k3 u2n62k3 p2n62k3] |
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Descr: | . Electronic Components Datasheets Active components Transistors ST std2n62k3_stf2n62k3_stu2n62k3_stp2n62k3.pdf |
Group: | Electronics > Components > Transistors |
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File name std2n62k3_stf2n62k3_stu2n62k3_stp2n62k3.pdf STD2N62K3, STF2N62K3 STP2N62K3, STU2N62K3 N-channel 620 V, 3 2.2 A, DPAK, IPAK, TO-220, TO-220FP , SuperMESH3TM Power MOSFET Features RDS(on) 3 Type VDSS ID Pw max 1 3 2 STD2N62K3 45 W DPAK 1 IPAK STF2N62K3 20 W 620 V < 3.6 2.2 A STP2N62K3 45 W STU2N62K3 100% avalanche tested 3 2 3 1 2 Extremely high dv/dt capability 1 TO-220 TO-220FP Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram Zener-protected D(2) Application Switching applications G(1) Description These devices are made using the SuperMESH3TM Power MOSFET technology that is obtained via improvements applied to STMicroelectronics' SuperMESHTM technology combined with a new optimized vertical structure. S(3) The resulting product has an extremely low on AM01476v1 resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STD2N62K3 2N62K3 DPAK Tape and reel STF2N62K3 2N62K3 TO-220FP STP2N62K3 2N62K3 T0-220 |
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