Agilent 5991-4491EN Thyristor Characterization Using the B1505A - Application Note c20140829 [7] free download

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Keysight Technologies Thyristor Characterization Using the Keysight B1505A Power Device Analyzer/Curve Tracer Application Note N1268A Ultra High Voltage Expander N1265A Ultra High Current Expander/Fixture N1266A HVSMU Current Expander B1505A Power Device Analyzer/Curve Tracer Introduction Thyristors, which behave like current-triggered diodes, have the unique current- voltage (IV) characteristics shown in Figure 1. This discontinuous behavior means that the characterization of a thyristor's DC parameters requires different methodol- ogies than those used to characterize power devices such as IGBTs and high-power MOSFETs. For example, before measuring thyristor holding current (IH) you must irst turn on the thyristor. Similarly, characterizing latching current (IL) requires a looping test sequence of triggering and measurement. This application note provides an overview of thyristor electrical characterization using the B1505A. Anode Current ON State Reverse breakdown Gate current voltage IG3 > IG2 > IG1 > 0 A Hold Current IG1 IG = 0 A (IH) IG3 IG2 Off-state leakage Reverse leakage current (IDRM) current (IRRM) OFF State Anode Voltage Reverse Blocking On Voltage State (VTM) Breakover voltage Figure 1. I-V characteristics of thyristor Typical Thyristor Parameters The static parameters listed in a typical thyristor data sheet are summarized in Table 1. The right-most column indicates the B1505A's measurement range for each parameter. Table 1. Typical DC parameters of thyristor and the compatibility of the B1505A