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Descr: | . Electronic Components Datasheets Active components Transistors ST stf13n95k3_stp13n95k3_stw13n95k3.pdf |
Group: | Electronics > Components > Transistors |
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File name stf13n95k3_stp13n95k3_stw13n95k3.pdf STF13N95K3 STP13N95K3, STW13N95K3 N-channel 950 V, 0.68 , 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3TM Power MOSFET Features Order codes VDSS RDS(on)max ID PW STF13N95K3 40 W 3 2 3 STP13N95K3 950 V < 0.85 10 A 1 1 2 190 W TO-220 TO-220FP STW13N95K3 Gate charge minimized Extremely large avalanche performance 100% avalanche tested 2 3 1 Very low intrinsic capacitance TO-247 Zener-protected Application Figure 1. Internal schematic diagram Switching applications D(2) Description These devices are made using the SuperMESH3TM Power MOSFET technology that is obtained via improvements applied to G(1) STMicroelectronics' SuperMESHTM technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF13N95K3 TO-220FP STP13N95K3 13N95K3 TO-220 Tube STW13N95K3 TO-247 September 2010 Doc ID 15685 Rev 2 1/15 www.st.com 15 Contents STF13N9 |
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