International Rectifier irfaf30 free download

File name irfaf30.pdf

PD - 90617 REPETITIVE A ALANCHE AND dv/dt RATED V IRFAF30 HEXFET TRANSISTORS 900V, N-CHANNEL THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAF30 900V 4.0 2.0 The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. TO-3 The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature Features: stability of the electrical parameters. n Repetitive Avalanche Ratings They are well suited for applications such as switching n Dynamic dv/dt Rating power supplies, motor controls, inverters, choppers, audio n Hermetically Sealed amplifiers and high energy pulse circuits. n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter Units ID @ VGS = 0V, TC = 25