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File name: | stp4nc80z_stp4nc80zfp_stb4nc80z_stb4nc80z-1.pdf [preview p4nc80z p4nc80zfp b4nc80z b4nc80z-1] |
Size: | 553 kB |
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Mfg: | ST |
Model: | p4nc80z p4nc80zfp b4nc80z b4nc80z-1 🔎 |
Original: | p4nc80z p4nc80zfp b4nc80z b4nc80z-1 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST stp4nc80z_stp4nc80zfp_stb4nc80z_stb4nc80z-1.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 09-08-2021 |
User: | Anonymous |
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File name stp4nc80z_stp4nc80zfp_stb4nc80z_stb4nc80z-1.pdf STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 4A STB4NC80Z/-1 800V < 2.8 4A 3 1 s TYPICAL RDS(on) = 2.4 2 D PAK 3 2 s EXTREMELY HIGH dv/dt AND CAPABILITY 1 GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP s 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE s) s s GATE CHARGE MINIMIZED t( 23 I2PAK 1 uc (Tabless TO-220) DESCRIPTION d The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrat- P ro ing back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capa- le te so bility with higher ruggedness performance as re- quested by a large variety of single-switch Ob applications. - (s) APPLICATIONS ct s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT o du e Pr o let ORDERING INFORMATION O bs SALES TYPE STP4NC80Z MARKING P4NC80Z PACKAGE TO-220 PACKAGING |
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