International Rectifier irhf57z30 free download

File name irhf57z30.pdf

PD - 93793A RADIATION HARDENED IRHF57Z30 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (TO-39) 4# c TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHF57Z30 100K Rads (Si) 0.045 12A* IRHF53Z30 300K Rads (Si) 0.045 12A* IRHF54Z30 600K Rads (Si) 0.045 12A* IRHF58Z30 1000K Rads (Si) 0.056 12A* TO-39 International Rectifier's R5TM technology provides Features: high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened cations. These devices have been characterized for n Ultra Low RDS(on) Single Event Effects (SEE) with useful performance n Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination n Identical Pre and Post Electrical Test Conditions of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings losses in switching applications such as DC to DC n Dynamic dv/dt Ratings converters and motor control. These devices retain n Simple Drive Requirements all of the well established advantages of MOSFETs n Ease of Paralleling such as voltage control, fast switching, ease of paral- n Hermetically Sealed leling and temperature stability of electrical param- n Electrically Isolated eters. Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25