International Rectifier irhf57230 free download

File name irhf57230.pdf

PD - 93788 RADIATION HARDENED IRHF57230 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-39) R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHF57230 100K Rads (Si) 0.22 7.3A IRHF53230 300K Rads (Si) 0.22 7.3A IRHF54230 600K Rads (Si) 0.22 7.3A IRHF58230 1000K Rads (Si) 0.275 7.3A TO-39 International Rectifier's R5TM technology provides Features: high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened cations. These devices have been characterized for n Ultra Low RDS(on) Single Event Effects (SEE) with useful performance n Neutron Tolerant up to an LET of 80 (MeV/(mg/cm2)). The combination n Identical Pre- and Post-Electrical Test Conditions of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings losses in switching applications such as DC to DC n Dynamic dv/dt Ratings converters and motor control. These devices retain n Simple Drive Requirements all of the well established advantages of MOSFETs n Ease of Paralleling such as voltage control, fast switching, ease of paral- n Hermetically Sealed leling and temperature stability of electrical param- eters. Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25