ST d10nm60n f10nm60n p10nm60n u10nm60n 2 free download

File name std10nm60n_stf10nm60n_stp10nm60n_stu10nm60n_2.pdf

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 8 A, DPAK, TO-220, TO-220FP, IPAK , MDmeshTM II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 8A STP10NM60N 70 W STU10NM60N 3 100% avalanche tested 2 3 1 1 Low input capacitance and gate charge IPAK DPAK Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order code Marking Package Packaging STD10NM60N 10NM60N DPAK Tape and reel STF10NM60N 10NM60N TO-220FP Tube STP10NM60N 10NM60N TO-220 Tube STU10NM60N 10NM60N IPAK Tube September 2010 Doc ID 15764 Rev 4 1/17 www.st.com 17 Contents STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .