Philips blf7g20l-200 7g20ls-200 free download

File name blf7g20l-200_7g20ls-200.pdf

BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 -- 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1620 28 55 18 33 29 [1] [1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications RF power amplifiers for W-CDMA base stations and multi-carrier applications in the 1805 MHz to 1990 MHz frequency range NXP Semiconductors BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G20L-200 (SOT502A) 1 drain 1 1 2 gate 3 3 source [1] 2