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File name: | bd677a_bd679a_bd681_bd678a_bd680a_bd682.pdf [preview bd677a bd679a bd681 bd678a bd680a bd682] |
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Descr: | . Electronic Components Datasheets Active components Transistors ST bd677a_bd679a_bd681_bd678a_bd680a_bd682.pdf |
Group: | Electronics > Components > Transistors |
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File name bd677a_bd679a_bd681_bd678a_bd680a_bd682.pdf BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON CONFIGURATION s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION s LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 3 DESCRIPTION SOT-32 The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications INTERNAL SCHEMATIC DIAGRAM The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. R 1 Typ.= 7K R 2 T yp.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 V CBO Collector-Base Voltage (IE = 0) 60 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 4 A I CM Collector Peak Current 6 A IB Base Current 0.1 A o P t ot Total Dissipation at T c 25 C 40 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C For PNP types voltage and current values are negative. September 1997 |
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