Fairchild Semiconductor nds9936 free download

File name nds9936.pdf

February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5A, 30V. RDS(ON) = 0.05 @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly High power and current handling capability in a widely used suited for low voltage applications such as DC/DC conversion, surface mount package. disk drive motor control, and other battery powered circuits Dual MOSFET in surface mount package. where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A = 25