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File name: | 5600LS AFM Enhanced Sample Versatility_ 300mm Wafer Vacuum Chuck 5991-2014EN c20140825 [2].pdf [preview 5600LS AFM Enhanced Sample Versatility 300mm Wafer Vacuum Chuck 5991-2014EN c20140825 [2]] |
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Mfg: | Agilent |
Model: | 5600LS AFM Enhanced Sample Versatility 300mm Wafer Vacuum Chuck 5991-2014EN c20140825 [2] 🔎 |
Original: | 5600LS AFM Enhanced Sample Versatility 300mm Wafer Vacuum Chuck 5991-2014EN c20140825 [2] 🔎 |
Descr: | Agilent 5600LS AFM Enhanced Sample Versatility_ 300mm Wafer Vacuum Chuck 5991-2014EN c20140825 [2].pdf |
Group: | Electronics > Other |
Uploaded: | 25-09-2021 |
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File name 5600LS AFM Enhanced Sample Versatility_ 300mm Wafer Vacuum Chuck 5991-2014EN c20140825 [2].pdf Keysight 5600LS AFM Enhanced Sample Versatility: 300mm Wafer Vacuum Chuck The Keysight Technologies, Inc. 5600LS AFM, already one of the most versatile atomic force microscopy systems on the market (with a fully programmable 200 mm stage that allows complete access over a full 200 mm in X/Y travel), has added yet another highly useful configuration. Previously, in order to image a 300 mm wafer on an AFM, an engineer needed to "break" the wafer and place the portion of interest on the stage. Such destructive testing is not only costly, but prevents further processing of the device in question, thus limiting the use of atomic force microscopy for process development. However, by utilizing the new 300 mm wafer vacuum chuck with a properly configured Keysight 5600LS AFM system, process engineers and failure analysis engineers can quickly obtain data via any of Keysight's AFM modes to provide valuable process information and feedback without wafer breakage. Available as a special configuration, this new 5600LS AFM option entails shifting and rotating the X/Y stage, mounting the 300 mm wafer vacuum chuck, and enabling an option within the Keysight PicoView control software that facilitates rotation of the camera image so as to simplify navigation and data acquisition. Contact your sales representative today for more information or to receive a quotation for this new option. A B C P+ Buried Layer Active Area of Devices SMM capacitance and dC/dV images of IC obtained simultaneously. Capacitance (A) clearly reveals differences in the varied shallow doping N+ Buried Layer with construct devices within the active areas. There are dramatic contrast differences in the dC/dV phase image (B) which confirms the presence of sub-surface highly doped layers. A vertical line profile across P+ Buried Layer the phase image [as indicated by the green line] in (B) is shown in (C). D 02 | Keysight | Keysight 5600LS AFM |
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