Philips pmbf4391 pmbf4392 pmbf4393 cnv free download

File name pmbf4391_pmbf4392_pmbf4393_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification April 1995 NXP Semiconductors Product specification PMBF4391; N-channel FETs PMBF4392; PMBF4393 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power handbook, halfpage 3 chopper or switching applications in industry. d g s PINNING 1 2 1 = drain Top view MAM385 2 = source 3 = gate Note 1. Drain and source are Fig.1 Simplified outline and symbol, SOT23. interchangeable. Marking code PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G QUICK REFERENCE DATA PMBF4391 PMBF4392 PMBF4393 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 20 V; VGS = 0 IDSS 50 25 5 mA Gate-source cut-off voltage 4 2 0.5 V VDS = 20 V; ID = 1 nA V(P)GS 10 5 3 V Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0 Rds on 30 60 100 Feedback capacitance at f = 1 MHz VGS = 12 V; VDS = 0 Crs 3.5 3.5 3.5 pF Turn-off time VDD = 10 V; VGS = 0 ID = 12 mA; VGSM = 12 V toff 20 ns ID = 6 mA; VGSM = 7 V toff 35 ns ID = 3 mA; VGSM = 5 V toff 50 ns April 1995 2 NXP Semiconductors Product specification