Philips bf510 bf511 bf512 bf513 free download

File name bf510_bf511_bf512_bf513.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p transistors in the miniature plastic BF512 = S8p envelope intended for applications up to the v.h.f. range in hybrid thick and BF513 = S9p thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios handbook, halfpage 3 (BF511) and mains radios (BF512) or the mixer stage (BF513). d g s PINNING - SOT23 1 2 1 = gate Top view MAM385 2 = drain 3 = source Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage VDS max. 20 V Drain current (DC or average) ID max. 30 mA Total power dissipation up to Tamb = 40 C Ptot max. 250 mW BF510 511 512 513 Drain current 0.7 2.5 6 10 mA VDS = 10 V; VGS = 0 IDSS 3.0 7.0 12 18 mA Transfer admittance (common source) VDS = 10 V; VGS = 0; f = 1 kHz yfs 2.5 4 6 7 mS Feedback capacitance VDS = 10 V; VGS = 0 Crs typ. 0.3 0.3 pF VDS = 10 V; ID = 5 mA Crs typ. 0.3 0.3 pF Noise figure at optimum source admittance GS = 1 mS; BS =