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Descr: | . Electronic Components Datasheets Active components Transistors ST stn3n45k3_stq3n45k3-ap_stu3n45k3.pdf |
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File name stn3n45k3_stq3n45k3-ap_stu3n45k3.pdf STN3N45K3 STQ3N45K3-AP, STU3N45K3 N-channel 450 V, 3.2 , 1.8 A, TO-92, SOT-223, IPAK SuperMESH3TM Power MOSFET Preliminary data Features RDS(on) Type VDSS ID Pw max 3 STN3N45K3 450 V < 3.8 0.6 A 2W 2 1 STQ3N45K3-AP 450 V < 3.8 0.6 A 2.5 W STU3N45K3 450 V < 3.8 1.8 A 27 W TO-92 IPAK 2 100% avalanche tested 3 2 Extremely high dv/dt capability 1 Gate charge minimized SOT-223 Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram D(2) Application Switching applications Description G(1) The new SuperMESH3TM series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESHTM layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special S(3) attention has been taken to ensure a very good AM01476v1 dv/dt capability and higher margin in breakdown voltage for the most demanding application. Table 1. Device summary Order codes Marking Package |
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