ST p11nm60 p11nm60fp b11nm60 b11nm60-1 free download

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STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK MDmeshTM Power MOSFET General features VDSS Type RDS(on) ID (@TJ=TJmax) 3 2 3 1 2 STP11NM60 650V <0.45 11A 1 TO-220 TO-220FP STP11NM60FP 650V <0.45 11A STB11NM60 650V <0.45 11A STB11NM60-1 650V <0.45 11A High dv/dt and avalanche capabilities 3 3 1 12 100% avalanche tested D2PAK i2PAK Low input capacitance and gate charge Low gate input resistance Description Internal schematic diagram The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. Applications Switching application Order codes Part number Marking Package Packaging STB11NM60T4 B11NM60 D