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STF16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 14 A, TO-220, TO-220FP, TO-247 , Zener-protected SuperMESHTM Power MOSFET Features RDS(on) Type VDSS ID Pw max STF16NK60Z 600 V < 0.42 14 A(1) 40 W 3 3 2 STP16NK60Z 600 V < 0.42 14 A 190 W 1 2 1 TO-220 STW16NK60Z 600 V < 0.42 14 A 190 W TO-220FP 1. Limited by package. 100% avalanche tested 3 Extremely high dv/dt capability 2 1 Gate charge minimized TO-247 Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram Application D(2) Switching applications Description The new SuperMESHTM series of Power G(1) MOSFETS is the result of further design improvements on ST's well-established strip- based PowerMESHTM layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding S(3) applications. The SuperMESHTM devices further AM01476v1 complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmeshTM products. Table 1. Device summary Order codes Marking Package Packaging STF16NK60Z F16NK60Z TO-220FP STP16NK60Z P16NK60Z TO-220 Tube STW16NK60Z W16NK60Z TO-247 December 2009 Doc ID 10249 Rev 5 1/15