ST p21nm60n f21nm60n b21nm60n b21nm60n-1 w21nm60n free download

File name stp21nm60n_stf21nm60n_stb21nm60n_stb21nm60n-1_stw21nm60n.pdf

STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmeshTM Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 3 1 STB21NM60N 650 V < 0.22 17 A 1 2 D2PAK 1 STB21NM60N-1 650 V < 0.22 17 A TO-220 TO-220FP STF21NM60N 650 V < 0.22 17 A(1) STP21NM60N 650 V < 0.22 17 A STW21NM60N 650 V < 0.22 17 A 1. Limited by maximum temperature allowed 3 3 2 12 1 100% avalanche tested I2PAK TO-247 Low input capacitance and gate charge Low gate input resistance Application Figure 1. Internal schematic diagram Switching applications Description This series of devices implements the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB21NM60N B21NM60N D2PAK Tape and reel 2PAK STB21NM60N-1 B21NM60N I Tube STF21NM60N F21NM60N TO-220FP Tube STP21NM60N P21NM60N TO-220 Tube STW21NM60N