Sanyo SA2037 & SC5694 free download

File name SA2037 и SC5694.pdf

Ordering number : ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications · Package Dimensions unit : mm 2042B 8.0 Relay drivers, lamp drivers, motor drivers and printer drivers. [2SA2037 / 2SC5694] 1.4 Features · · · · · 1.0 4.0 1.0 3.3 Adoption of MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 4.8 1.7 2.4 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Specifications ( ):2SA2037 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings (-50)60 (-)50 (-)6 (-)7 (-)10 (-)1.2 1.2 10 150 -55 to +150 Unit V V V A A A W W °C °C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-2916 No.6587-1/5 2SA2037 / 2SC5694 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)1A VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz IC=(--)2.5A, IB=(-)125mA IC=(--)2.5A, IB=(-)125mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE= IE=(-)10µA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. (--50)60 (--)50 (--)6 30 (250)300 15 150 (290)330 (50)28 (--150)130 (--300)260 (--)0.85 (--)1.2 Ratings min typ max (--)0.1 (--)0.1 300 MHz pF mV V V V V ns ns ns Unit µA µA Swicthing Time Test Circuit IB1 IB2 VR RB RL + 100µF VBE= --5V 10I