Fuji 2mbi75n-sa120 free download

File name 2MBI75N-120.pdf

IGBT MODULE ( N series ) n Features · Square RBSOA · Low Saturation Voltage · Less Total Power Dissipation · Improved FWD Characteristic · Minimized Internal Stray Inductance · Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications · High Power Switching · A.C. Motor Controls · D.C. Motor Controls · Uninterruptible Power Supply n Maximum Ratings and Characteristics · Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 ± 20 75 150 75 150 600 +150 -40 +125 2500 3.5 3.5 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) · Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=75mA VGE=15V IC=75A VGE=0V VCE=10V f=1MHz VCC=600V IC=75A VGE=± 15V RG=16 IF=75A VGE=0V IF=75A Min. Typ. Max. 1.0 15 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 12000 4350 3870 0.65 0.25 0.85 0.35 µs V ns · Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.21 0.47 Units °C/W 0.05 Collector current vs. Collector-Emitter voltage T j=25°C 175 V GE =20V, 15V, 12V, 10V 150 125 100 75 50 8V 25 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] C Collector current vs. Collector-Emitter voltage T j=125°C 175 V GE =20V, 15V, 12V, 10V, 150 125 [A] C [A] 100 75 8V 50 25 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector current : I Collector current : I Collector-Emitter vs. Gate-Emitter voltage T j=25°C Collector-Emitter vs. Gate-Emitter voltage T j=125°C 10 10 [V] CE 8 [V] Collector-Emitter voltage V CE 8 Collector-Emitter voltage :V 6 IC= 4 150A 75A 2 37.5A 6 IC= 4 150A 2 75A 37.5A 0 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, R G =16 , V GE =±15V, T j=25°C 1000 t off t on 1000 Switching time vs. Collector current V CC =600V, R G =16 , V GE =±15V, Tj=125°C t off t on tf tr [nsec] tf tr on, t r, t off, t f 100 on, t r, t off, t f [nsec] 100 Switching time : t 10 0 50 100 150 Collector current : I C [A] Switching time : t 10 0 50 100 150 Collector current : I C [A] Switching time vs. R G V CC =600V, I C =75A, V GE =±15V, T j=25°C 1000 t off Dynamic input character