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IGBT MODULE ( N series ) n Features
· Square RBSOA · Low Saturation Voltage · Less Total Power Dissipation · Improved FWD Characteristic · Minimized Internal Stray Inductance · Overcurrent Limiting Function (4~5 Times Rated Current)
n Outline Drawing
n Applications
· High Power Switching · A.C. Motor Controls · D.C. Motor Controls · Uninterruptible Power Supply
n Maximum Ratings and Characteristics
· Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 ± 20 75 150 75 150 600 +150 -40 +125 2500 3.5 3.5 Units V V A W °C °C V Nm
n Equivalent Circuit
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
· Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=75mA VGE=15V IC=75A VGE=0V VCE=10V f=1MHz VCC=600V IC=75A VGE=± 15V RG=16 IF=75A VGE=0V IF=75A Min. Typ. Max. 1.0 15 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350
4.5 12000 4350 3870 0.65 0.25 0.85 0.35
µs V ns
· Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.21 0.47 Units °C/W
0.05
Collector current vs. Collector-Emitter voltage T j=25°C 175 V GE =20V, 15V, 12V, 10V 150 125 100 75 50 8V 25 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V]
C
Collector current vs. Collector-Emitter voltage T j=125°C 175 V GE =20V, 15V, 12V, 10V, 150 125
[A]
C
[A]
100 75 8V 50 25 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V]
Collector current : I
Collector current : I
Collector-Emitter vs. Gate-Emitter voltage T j=25°C
Collector-Emitter vs. Gate-Emitter voltage T j=125°C
10
10
[V]
CE
8
[V] Collector-Emitter voltage V
CE
8
Collector-Emitter voltage :V
6 IC= 4 150A 75A 2 37.5A
6 IC= 4 150A 2 75A 37.5A 0
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V]
0
5
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current V CC =600V, R G =16 , V GE =±15V, T j=25°C 1000 t off t on 1000
Switching time vs. Collector current V CC =600V, R G =16 , V GE =±15V, Tj=125°C t off t on tf tr
[nsec]
tf tr
on, t r, t off, t f
100
on, t r, t off, t f
[nsec]
100
Switching time : t
10 0 50 100 150 Collector current : I C [A]
Switching time : t
10 0 50 100 150 Collector current : I C [A]
Switching time vs. R G V CC =600V, I C =75A, V GE =±15V, T j=25°C 1000 t off
Dynamic input characteristics T j=25°C 25 V CC =400V 600V 800 800V 20
[nsec]
t on 1000 tr tf
on, t r, t off, t f
Collector-Emitter voltage : V
CE
[V]
600
15
Switching time : t
400
10
200
100
5
0 10 Gate resistance : R G [ ] Forward current vs. Forward voltage V GE = O V 100 0 200 400 600 800
0 1000
Gate charge : Q G [nC] Reverse recovery characteristics t rr, I rr vs. I F
T j=125°C 150
25°C
rr [nsec]
t rr 125°C t rr 25°C 100 I rr 125°C I rr 25°C
[A]
Reverse recovery current : I
rr F
[A] Forward current : I
100 50
Reverse recovery time
10
0 0 1 2 3 4 5
:t
0
50
100
150
Forward voltage : V F [V]
Forward current : I F [A]
Transient thermal resistance 1 700 Diode
Reversed biased safe operating area +V GE =15V, -V GE <15V, T j<125°C, R G >16
[°C/W]
600
[A]
IGBT
th(j-c)
500 SCSOA 400 300 200 100 RBSOA (Repetitive pulse) (non-repetitive pulse)
Thermal resistance : R
0,1
0,01 0,001
Collector current : I
C
0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V]
Switching loss vs. Collector current V CC=600V, R G =16 , V GE =±15V 25
Capacitance vs. Collector-Emitter voltage T j=25°C
E off, E rr [mJ/cycle]
E on 125°C E off 125°C
C oes , C res [nF]
20
10
C ies
15
E on 25°C
on,
Switching loss : E
Capacitance : C
10 E off 25°C E rr 125°C 5 E rr 25°C 0 0 50 100 150
ies ,
1
C oes C res
0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V]
Collector Current : I C [A]
Fuji Electric GmbH
Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60
P.O. Box 702708Box 702708 -75370 Phone (972) 733-1700 Fax (972) 233-0481 - www.collmer.com P.O. - Dallas, TX Dallas, TX - (972) 233-1589 - (972) 381-9991 (fax)
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