Alpha&Omega AOP605 free download

File name aop605l_175.pdf

AOP605 Complementary Enhancement Mode Field Effect Transistor General Description The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) RDS(ON) < 28m (VGS = 10V) < 35m (VGS = -10V) < 43m (VGS = 4.5V) < 58m (VGS = -4.5V) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±20 -6.6 -5.3 -30 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 7.5 6 30 2.5 1.6 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Symbol t 10s Steady-State Steady-State RJA RJL Typ 40 67 33 Typ 38 66 30 Max 50 80 40 Max 50 80 40 Units °C/W °C/W °C/W Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOP605 n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A Forward Transconductance VDS=5V, ID=7.5A 12 Body Diode Forward Voltage IS=1A, VGS=0V Maximum Body-DiodeContinuous Current TJ=125°C 33 16 0.76 1 4 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=4.5V, VDS=15V, ID=7.5A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.0, RGEN=6 IF=7.5A, dI/dt=100A/µs 4.1 20.6 5.2 16.5 7.8 20 3.6 16.6 8.1 820 43 1 30 22.6 28 1.8 Min 30 1 5 100 3 Typ Max Units V µA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance. Coss Crss Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs A: The