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File name: | 3079_PhaseChangeMem062810.pdf [preview 3079 PhaseChangeMem062810] |
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Descr: | Keithley Appnotes 3079_PhaseChangeMem062810.pdf |
Group: | Electronics > Other |
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File name 3079_PhaseChangeMem062810.pdf A G R E AT E R M E AS U R E O F CO N F I D E N C E alloys are what allow them to store binary data. The high resistance amorphous state is used to represent a binary 0; the low resist- ance crystalline state represents a 1. The new- est PCM designs and materials can achieve multiple distinct levels [1], for example, 16 crystalline states, not just two, each with different electrical properties. This allows Phase Change a single cell to represent multiple bits, and to increase memory density substantially, which is currently done in flash memory. Memory: The amorphous state vs. the crystalline state Fundamentals A brief overview of the differences between the amorphous and crystalline states may and Measurement help clarify how PCM devices work. In the amorphous phase, the GST mate- rial has short-range atomic order and low Techniques free electron density, which results in higher resistivity. This is sometimes referred to as the RESET phase, because it is usually |
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