Agilent 5990-4158EN B1505A Power Device Analyzer Curve Tracer - Brochure c20140923 [16] free download

File name 5990-4158EN B1505A Power Device Analyzer Curve Tracer - Brochure c20140923 [16].pdf

Keysight Technologies B1505A Power Device Analyzer/Curve Tracer The all-in-one solution for power device characterization from sub-pA to 1500 A/10 kV Can your present equipment solve these key power device evaluation challenges? Insuficient measurement capability Power devices require characterization across their entire operating region, which can range from nanoamps or microvolts up to many amps and thousands of volts. Current requirements increase each year as device technologies continue to improve. For example, characterization of present- day LVMOSFETs requires 100 A, while IGBT modules can require over 1000 A. In addition, the ability to perform narrow (microsecond range) pulsed IV measurements is also important to prevent device self-heating that can distort measurement results. While some production power device testers can cover wide current and voltage ranges, they are both user-unfriendly and expensive. Custom-built solutions consisting of individual instruments are difficult and expensive to support, and they often lack essential safety features. Lastly, characterizing the switching speeds of power devices necessitates some means to characterize junction capacitances at biases of several thousand volts. However, until now no measurement equipment existed that could meet all of these requirements. Quick and easy characterization with medium current at high voltage region The characterization of high voltage devices near the safe operation area (SOA) is crucial to guarantee their performance specifications. Dynamic testing is typically used for this since the required static power is beyond the capabilities of conventional test equipment. Unfortunately, dynamic test equipment is difficult to use and typically lacks sufficient accuracy. Alternative schemes using multiple SMUs tied together can supply sufficient current, but their pulse widths are too long to prevent device self-heating that causes unreliable measurement data. Issues with novel new device (SiC, GaN, IGBT) characterization New wide bandgap materials such as SiC and GaN show great promise for emerging high-power applications because of their ability to withstand large voltages and their fast switching speeds. IGBTs are becoming increasingly important as electronic switches for a variety of applications. Characterization of large breakdown voltages (up to 10 k