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BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor · Using In Horizontal Output Stages of 110° Crt Video Displays ° · BUILT-IN SPEED-UP Diode Between Base and Emitter 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BU806 : BU807 VCEO Collector-Emitter Voltage : BU806 : BU807 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 200 150 6 8 15 2 60 150 - 55 ~150 V V V A A A W °C °C 400 330 V V Value Units Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO (sus) Parameter * Collector-Emitter Sustaining Voltage : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Emitter Cut-off Current * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Damper Diode Forward Voltage Test Condition IC = 100mA, IB = 0 Min. 200 150 100 100 100 100 3 1.5 2.4 2 Max. Units V V µA µA µA µA mA V V V ICES VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V VBE = 6V, IC = 0 IC = 5A, IB = 50mA IC = 5A, IB = 50mA IF = 4A ICEV IEBO VCE(sat) VBE(sat) VF * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 Ic = 100 IB hFE, DC CURRENT GAIN VBE(sat) 100 V CE = 5V V CE = 1.5V 1 V CE(sat) 10 0.1 1 10 0.1 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 1000 IC[A], COLLECTOR CURRENT 100 Vf[V], FORWARD VOLTAGE IC MAX. (Pulse) 10 1ms 10us 500 m 10 1 IC MAX. (DC) 1 us s DC 100us 0.1 BU806 0.1 0.1 1 10 0.01 0.01 BU807 0.1 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Damper Diode Figure 4. Safe Operating Area 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 50 o 100 150 200 TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ш3.60 ±0.10 (1.70) 1.30 ­0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 ­0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademark