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BU406/406H/408 BU406/406H/408 High Voltage Switching · Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Value 400 200 6 7 10 4 60 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A 10 0.75 0.4 0.4 Min. Max. 5 100 1 1 1 1 1 1.2 1.2 1.5 Units mA µA mA mA V V V V V V MHz µs µs µs IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU406 : BU406H : BU408 Base-Emitter Saturation Voltage : BU406 : BU406H : BU408 Current Gain Bandwidth Product Turn OFF Time : BU406 : BU406H : BU408 VBE(sat) fT tOFF ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU406/406H/408 Typical Characteristics 5 IB = 2 00m A IB = mA 180 60mA IB = 1 1000 IC[A], COLLECTOR CURRENT 4 A IB = 140m A IB = 120m VCE = 5V hFE, DC CURRENT GAIN 10 0m A I B = 10 mA IB = 80 IB = 60 mA 100 3 mA IB = 40 2 IB = 20mA 1 10 0 0 1 2 3 4 5 6 7 8 9 1 1 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE 10000 1000 IC = 10 IB f = 1MHz 1000 VBE (sat) Cob [pF], CAPACITANCE 100 100 10 VCE(sat) 10 1 10 100 1000 10000 1 1 10 100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 80 70 IC[A], COLLECTOR CURRENT PD [W], POWER DISSIPATIOAN IC Max. (Pulsed) 10 60 IC Max. (Continuous) 50 n io at ip ss Di s 1m 40 s 0m 10 ited m Li s m 10 30 1 20 VCE MAX. d ite im bL S/ 10 0 0 25 50 o 0.1 1 10 100 75 100 125 150 175 200 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU406/406H/408 Typical Characteristics (Continued) Figure 7. Static Characteristic Figure 8. DC current Gain ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU406/406H/408 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ш3.60 ±0.10 (1.70) 1.30 ­0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80