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STW14NM50
N-CHANNEL 550V @ Tjmax - 0.32 - 14A TO-247
MDmeshTM MOSFET

Table 1: General Features Figure 1: Package
TYPE VDSS
RDS(on) ID
(@Tjmax)

STW14NM50 550 V < 0.35 14 A
s TYPICAL RDS(on) = 0.32
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE RATED
s LOW INPUT CAPACITANCE AND GATE


s)
CHARGE

t(
s LOW GATE INPUT RESISTANCE


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s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS TO-247

d
DESCRIPTION
P ro
te
The MDmeshTM is a new revolutionary MOSFET Figure 2: Internal Schematic Diagram

le
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizon-

so
tal layout. The resulting product has an


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outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprierati strip tech-
nique yields overall dynamic performance that is
-
s)
significantly better than that of similar completi-
tion's products.
t(
APPLICATIONS

d uc
The MDmeshTM family is very suitablr for increase

ro
the power density of high voltage converters allow-

P
ing system miniaturization and higher efficiencies.

e
let
Table 2: Order Codes

so SALES TYPE MARKING PACKAGE PACKAGING


Ob
STW14NM50 W14NM50 TO-247 TUBE




Rev. 5
July 2004 1/9
STW14NM50


Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
VGS Gate- source Voltage