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2SC2551(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
High voltage
Low saturation voltage
Small collector output capacitance
Complementary to 2SA1091
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 100 mA
PC Collector power dissipation 400 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100uA, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 6 V
Collector cut-off current ICBO VCB=300V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A
hFE(1) VCE=10V, IC=20mA 30 150
DC current gain
hFE(2) VCE=10V, IC=1mA 20
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 1.2 V
Transition frequency fT VCE=10V, IC=20mA 80 MHz
Collector output capacitance Cob VCB=20V,IE=0,f=1MHz 4 pF
CLASSIFICATION OF hFE(1)
Rank R O
Range 30-90 50-150
2SC2551(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
2SC2551(NPN)
TO-92 Bipolar Transistors