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PBSS305PZ
80 V, 4.5 A PNP low VCEsat (BISS) transistor
Rev. 02 -- 8 December 2009 Product data sheet




1. Product profile

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS305NZ.

1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -80 V
IC collector current - - -4.5 A
ICM peak collector current single pulse; - - -9 A
tp 1 ms
RCEsat collector-emitter saturation IC = -4 A; [1] - 61 87 m
resistance IB = -200 mA

[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS305PZ
80 V, 4.5 A PNP low VCEsat (BISS) transistor



2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 base
4 2, 4
2 collector
3 emitter 1
4 collector
1 2 3 3
sym028




3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS305PZ SC-73 plastic surface-mounted package with increased heatsink; SOT223
4 leads


4. Marking
Table 4. Marking codes
Type number Marking code
PBSS305PZ S305PZ




PBSS305PZ_2