Text preview for : 2n3906.pdf part of Wietron 2n3906 . Electronic Components Datasheets Active components Transistors Wietron 2n3906.pdf
Back to : 2n3906.pdf | Home
2N3906
PNP General Purpose Transistors
TO-92
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -40 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base VOltage VEBO -5.0 Vdc
Collector Current IC -200 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO -40 - Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 - Vdc
-
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 Vdc
Collector Cutoff Current (VCE= -40 Vdc, I B =0) ICE0 -0.1 uAdc
-
Collector Cutoff Current (VCB= -40 Vdc, IE=0) ICBO - -0.1 uAdc
Emitter Cutoff Current (VEB= -5.0Vdc, I C =0) IEBO - -0.1 uAdc
WEITRON
http://www.weitron.com.tw
2N3906
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain hFE (1) 100 - 400 -
(IC= -10 mAdc, VCE=-1.0 Vdc)
DC Current Gain hFE (2) 60 - - -
(IC= -50 mAdc, VCE= 1.0 Vdc)
Collector-Emitter Saturation Voltage -
VCE(sat) - -0.3 Vdc
(IC= -50 mAdc, IB= -5 mAdc)
Base-Emitter Saturation Voltage -
VBE(sat) - -0.95 Vdc
(IC= -50 mAdc, IB= -5 mAdc)
Current-Gain-Bandwidth Product 250
(IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) fT - - MHz
Classification of hFE(1)
Rank O Y G
Range 100-200 200-300 300-400
WEITRON
http://www.weitron.com.tw
2N3906
WEITRON
http://www.weitron.com.tw
2N3906
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
WEITRON
http://www.weitron.com.tw