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BSH120T
N-channel enhancement mode field-effect transistor
Rev. 01 -- 06 September 2000 Product specification

M3D186

1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.

Product availability:
BSH120T in SOT54 (TO-92).

2. Features
s TrenchMOSTM technology
s Low on-state resistance
s Very fast switching
s Logic level compatible.

3. Applications
s Relay drivers
c
s DC to DC converters
c

s Logic level translators.

4. Pinning information
Table 1: Pinning - SOT54, simplified outline and symbol
Pin Description Simplified outline Symbol
1 source (s)
d
2 drain (d)
3 gate (g)
g
03ab40
3 21
MBB076 s

SOT54 (TO-92)

1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors BSH120T
N-channel enhancement mode field-effect transistor

5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150