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BUT100
HIGH POWER NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH RUGGEDNESS
APPLICATION
s MOTOR CONTROL
s UNINTERRUPTABLE POWER SUPPLY
1
2
DESCRIPTION
The BUT100 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use TO-3
in high frequency and efficency converters, (version " S ")
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CEV Collector-Emitter Voltage (V BE = -1.5V) 200 V
V CEO Collector-Emitter Voltage (I B = 0) 125 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IE Emitter Current 50 A
I EM Emitter Peak Current 150 A
IB Base Current 10 A
I BM Base Peak Current 30 A
P tot Total Dissipation at T c < 25 o C 300 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
April 1997 1/4
BUT100
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.58 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collector Cut-off V CE = V CEV 1 mA
o
Current (R BE = 5) V CE = V CEV T C = 100 C 5 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 1 mA
Current V CE = VCEV V BE = -1.5V TC = 100 o C 4 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 0.2 A 125 V
Sustaining Voltage L = 25mH
V EBO Emitter-Base Voltage I E = 50mA 7 V
(I C = 0)
V CE(sat) Collector-Emitter IC = 50A IB = 2.5A 0.9 V
Saturation Voltage IC = 100A IB = 10A 0.9 V
IC = 50A IB = 2.5A T j = 100 o C 1.2 V
IC = 100A IB = 10A T j = 100o C 1.5 V
V BE(sat) Base-Emitter IC = 50A IB = 2.5A 1.4 V
Saturation Voltage IC = 100A IB = 10A 2 V
IC = 50A IB = 2.5A T j = 100 o C 1.4 V
o
IC = 100A IB = 10A T j = 100 C 2.1 V
di c /dt Rate of Rise of V CC = 100V R C = 0 I B1 = 5A 180 A/