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STGD3NB60H
N-CHANNEL 3A - 600V - DPAK
PowerMESHTM IGBT
TYPE VCES VCE(sat) IC
STD3NB60H 600 V < 2.8 V 3A
s HIGH INPUT IMPEDANCE
s LOW ON-VOLTAGE DROP (Vcesat)
s OFF LOSSES INCLUDE TAIL CURRENT 3
s LOW GATE CHARGE 1
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s CO-PACKAGED WITH TURBOSWITCHT DPAK
s TYPICAL SHORT CIRCUIT WITHSTAND TIME
5MICROS S-family, 4 micro H family
s ANTIPARALLEL DIODE
DESCRIPTION INTERNAL SCHEMATIC DIAGRAM
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 20 V
VGE Gate-Emitter Voltage