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KTC3195
TO-92S Transistor (NPN)
1. EMITTER
TO-92S
2. COLLECTOR
123 3. BASE
Features
Small reverse transfer capacitance Cre=0.7pF(Typ)
Low noise Figure: NF=2.5dB(Typ.)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 20 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 150 Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V
Collector cut-off current ICBO VCB=40V, IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A
DC current gain hFE(1) VCE=6V, IC=1mA 40 200
Transition frequency fT VCE=6V, IC=1mA 300 550 MHz
Reverse Transfer capacitance Cre VCB=6V, IE=0, f=1MHz 0.7 pF
Noise figure NF 2.5 5 dB
VCE=6V, IC=1mA,f=100MHZ
Power Gain Gpe 18 dB
CLASSIFICATION OF hFE(1)
Rank R O Y
Range 40-80 70-140 100-200
Marking
KTC3195
TO-92S Transistor (NPN)
Typical Characteristics