bfg591.pdf part of Philips bfg591 bfg591.pdf, . Electronic Components Datasheets Active components Transistors Philips bfg591.pdf text manual preview

Text preview for : bfg591.pdf part of Philips bfg591 . Electronic Components Datasheets Active components Transistors Philips bfg591.pdf

Back to : bfg591.pdf | Home

DISCRETE SEMICONDUCTORS

DATA SHEET

BFG591
NPN 7 GHz wideband transistor
Product specification 1995 Sep 04
Supersedes data of November 1992
NXP Semiconductors Product specification

NPN 7 GHz wideband transistor BFG591

FEATURES DESCRIPTION
High power gain NPN silicon planar epitaxial transistor lfpage 4

Low noise figure in a plastic, 4-pin SOT223 package.

High transition frequency
Gold metallization ensures PINNING
excellent reliability. PIN DESCRIPTION
1 emitter
APPLICATIONS
2 base
Intended for applications in the GHz 3 emitter 1 2 3
range such as MATV or CATV
4 collector Top view MSB002 - 1
amplifiers and RF communications
subscriber equipment. Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
IC collector current (DC) 200 mA
Ptot total power dissipation up to Ts = 80 C; note 1 2 W
hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250
Cre feedback capacitance IC = Ic = 0; VCE = 12 V; f = 1 MHz 0.7 pF
fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz 7 GHz
GUM maximum unilateral power IC = 70 mA; VCE = 12 V; 13 dB
gain f = 900 MHz; Tamb = 25 C
2 insertion power gain IC = 70 mA; VCE = 12 V; 12 dB
s 21
f = 900 MHz; Tamb = 25 C

Note
1. Ts is the temperature at the soldering point of the collector pin.

1995 Sep 04 2
NXP Semiconductors Product specification

NPN 7 GHz wideband transistor BFG591

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 3 V
IC collector current (DC) 200 mA
Ptot total power dissipation up to Ts = 80 C; note 1 2 W
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to note 1 35 K/W
soldering point
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.

1995 Sep 04 3
NXP Semiconductors Product specification

NPN 7 GHz wideband transistor BFG591

CHARACTERISTICS
Tj = 25 C (unless otherwise specified).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; IE = 0 20 V
V(BR)CES collector-emitter breakdown voltage IC = 10 mA; IB = 0 15 V
V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC = 0 3 V
ICBO collector-base leakage current IE = 0; VCB = 10 V 100 nA
hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250
Cre feedback capacitance IB = Ib = 0; VCE = 12 V; 0.7 pF
f = 1 MHz
fT transition frequency IC = 70 mA; VCE = 12 V; 7 GHz
f = 1 GHz
GUM maximum unilateral power gain; IC = 70 mA; VCE = 12 V; 13 dB
note 1 f = 900 MHz; Tamb = 25 C
IC = 70 mA; VCE = 12 V; 7.5 dB
f = 2 GHz; Tamb = 25 C
2 insertion power gain IC = 70 mA; VCE = 12 V; 12 dB
s 21
f = 1 GHz; Tamb = 25 C
Vo output voltage note 2 700 mV

Notes
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB.
1