Text preview for : am80610-03.pdf part of ST am80610-03 . Electronic Components Datasheets Active components Transistors ST am80610-03.pdf



Back to : am80610-03.pdf | Home

AM80610-030
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS


.
. REFRACTORY/GOLD METALLIZATION

.
.
EMITTER SITE BALLASTED
INPUT/OUTPUT MATCHING

. METAL/CERAMIC HERMETIC PACKAGE
POUT = 30 W MIN. WITH 8.5 dB GAIN

.400 x .400 2NLF L (S042)
hermetically sealed

ORDER CODE BRANDING
AM80610-030 80610-30




DESCRIPTION PIN CONNECTION
The AM80610-030 is a high power, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
range.
AM80610-030 utilizes a rugged, overlay, emitter-
ballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power am-
plifiers. Typical applications include military com-
munications, ECM, and test equipment.
The AM80610-030 is provided in the industry-
standard, metal/ceramic AMPACTM hermetic 1. Collector 3. Emitter
package. 2. Base 4. Base



ABSOLUTE MAXIMUM RATINGS (T case = 25