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BF1206F
Dual N-channel dual gate MOSFET
Rev. 01 -- 30 January 2006 Product data sheet
1. Product profile
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Two low noise gain controlled amplifiers in a single package
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
s Suited for 3 volt applications
1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners
Philips Semiconductors BF1206F
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1: Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage (DC) - - 6 V
ID drain current (DC) - - 30 mA
|yfs| forward transfer admittance ID = 4 mA
amplifier A 17 22 32 mS
amplifier B 17 22 32 mS
Ciss(G1) input capacitance at gate1 ID = 4 mA; f = 100 MHz
amplifier A - 2.4 2.9 pF
amplifier B - 1.7 2.2 pF
NF noise figure ID = 4 mA
amplifier A; f = 400 MHz - 1.0 1.6 dB
amplifier B; f = 800 MHz - 1.0 1.6 dB
Xmod cross modulation input level for k = 1 % at
40 dB AGC
amplifier A 92 97 - dB