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STS3C3F30L
N-CHANNEL 30V - 0.050 - 3.5A SO-8
P-CHANNEL 30V - 0.140 - 3A SO-8
STripFETTM II POWER MOSFET

TYPE VDSS RDS(on) ID

STS3C3F30L(N-Channel) 30 V < 65 m 3.5 A
STS3C3F30L(P-Channel) 30 V < 165 m 3A
s TYPICAL RDS(on) (N-Channel) = 50 m
s TYPICAL RDS(on) (P-Channel) = 140 m
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE

DESCRIPTION SO-8
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
SizeTM" strip-based process. The resulting transistor
shows extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufacturing re- INTERNAL SCHEMATIC DIAGRAM
producibility.

APPLICATIONS
s DC/DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT
s POWER MANAGEMENT IN CELLULAR

PHONES

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter N-CHANNEL P-CHANNEL Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k) 30 V
VGS Gate- source Voltage