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2SB1132
PNP Plastic-Encapsulate Transistors
SOT-89
1
2
1. BASE 3
2. COLLECTOR
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25% )
C
Rating Symbol Value Unit
Collector-Emitter Voltage VCBO -40 Vdc
Collector-Base Voltage VCEO -32 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
IC -1.0 A(DC)
Collector Current
ICP -2.0 A (Pulse)*
Collector Power Dissipation PC 0.5 W
Junction Temperature, Storage Temperature T j , Tstg 150, -55 to +150 %
C
* Single pulse Pw = 100ms
DEVICE MARKING
2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Base Breakdown Voltage (IC= -50 uAdc, I E =0) V(BR)CBO -40 - Vdc
Collector-Emitter Breakdown Voltage (IC = -1 mAdc, IB =0) V(BR)CEO -32 - Vdc
Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC =0) V(BR)EBO -5.0 - Vdc
Collector Cutoff Current (VCB= -20Vdc, IE=0) ICBO - -0.5 uAdc
Emitter Cutoff Current (VEB= -4.0 Vdc, IC =0) IEBO - -0.5 uAdc
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2SB1132
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
hFE 82 - 390 -
(IC= -100 mAdc, VCE= -3 Vdc)
Collector-Emitter Saturation Voltage
VCE(sat) - - -0.5 Vdc
(IC= -500 mAdc, I B = -50mAdc)
Transition Frequency -
(IC= -50mAdc, VCE=-5 Vdc, f=30MHz) fT 150 - MHz
Collector Output Capacitance
(IE= 0, VCB=-10 Vdc, f=1MHz) Cob - 20 30 PF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
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2SB1132
FIG.1 FIG.2
FIG.3 FIG.4
FIG.5 FIG.6
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2SB1132
FIG.7 FIG.8
FIG.9 FIG.10
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2SB1132
SOT-89 Outline Dimensions unit:mm
SOT-89
E Dim Min Max
G A A 1.400 1.600
B 0.320 0.520
C 0.360 0.560
H D 0.350 0.440
J C E 4.400 4.600
G 1.400 1.800
H 2.300 2.600
B D J 3.940 4.250
K
K 1.500TYP
L 3.100
L 2.900
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