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KTD1304
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3.COLLECTOR

Features
High emitter-base voltage:VEBO=12V(Min)
low on resistance:Ron=0.6(max)(IB=1mA)

MARKING: MAX

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 25 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 12 V
IC Collector Current -Continuous 0.3 A
PC Collector Power Dissipation 0.2 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 25 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V

Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 12 V

Collector cut-off current ICBO VCB=25 V, IE=0 0.1 A

Emitter cut-off current IEBO VEB=12V, IC=0 0.1 A

hFE(FOR) VCE=2V, IC=4 mA 200 1000
DC current gain
hFE(REV) VCE= 2V, IC= 4mA 20

Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB=10 mA 0.25 V

Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=10mA 1 V

VCE=10V, IC= 1mA
Transition frequency fT 60 MHz
f=100MHz
output capacitance Cob VCB=10V,IE=0,f=1MHz 10 pF
On resistance R(on) Vin=0.3V,IB=1mA,f=1KHZ 0.6
KTD1304
SOT-23 Transistor(NPN)

Typical characteristics