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BCP52/53
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s GENERAL PURPOSE MAINLY INTENDED
2
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE 3
2
s NPN COMPLEMENTS ARE BCP55 AND 1
BCP56 RESPECTIVELY
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BCP52 BCP53
V CBO Collector-Base Voltage (I E = 0) -60 -100 V
V CEO Collector-Emitter Voltage (I B = 0) -60 -80 V
V CER Collector-Emitter Voltage (R BE = 1K) -60 -100 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -1 A
I CM Collector Peak Current (t p < 5 ms) -1.5 A
IB Base Current -0.1 A
I BM Base Peak Current (t p < ms) -0.2 A
P tot Total Dissipation at T c = 25 o C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
October 1997 1/4
BCP52/53
THERMAL DATA
o
R thj-amb